PART |
Description |
Maker |
T4312816B T4312816B-6SG T4312816B-7S T4312816B-7SG |
8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM
|
Taiwan Memory Technology
|
T436416C T436416C-6S T436416C-7S T436416C-7SG T436 |
4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
|
TMT[Taiwan Memory Technology]
|
T4312816B-7S T4312816B-7SG |
8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM
|
TM Technology, Inc.
|
TCS59SM804BFTL-80 TCS59SM808BFTL-80 TCS59SM808BFT- |
8M×4Banks×8Bits Synchronous DRAM(4M×8位同步动态RAM) 8M×4Banks×8Bits Synchronous DRAM(48M×8位同步动态RAM) 4M×4Banks×16Bits Synchronous DRAM(44M×16位同步动态RAM) 4米4Banks × 16位同步DRAM米16位同步动态RAM)的 16M×4Banks×4Bits Synchronous DRAM(46M×4位同步动态RAM) 1,600 × 4Banks × 4Bits同步DRAM4,600 × 4位同步动态RAM)的
|
Toshiba Corporation Toshiba, Corp.
|
AK4550VT AKM4550 AKD4550 AK4550 AK4550VTP-E2 AK535 |
Enchanced dual bit 20 bit ADC SPECIALTY CONSUMER CIRCUIT, PDSO16 JT 41C 41#20 PIN PLUG LOW POWER & SMALL PACKAGE 16BIT CODEC Low Power & Samll Package 16bit ## CODEC LOW POWER & SMALL PACKAGE 16BIT CODEC
|
Asahi Kasei Microsystems Co.,Ltd AKM[Asahi Kasei Microsystems] Asahi Kasei Microsystem...
|
M464S1724CT1-L1L_C1L M464S1724CT1-L1H_C1H M464S172 |
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD Data sheet 16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD 16Mx64M × 16位的SODIMM内存4Banks4K的刷新,3.3V的同步DRAM的社民党 16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD 16Mx64M × 16位的SODIMM内存BanksK的刷新,3.3V的同步DRAM的社民党 16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
HSD16M64F8V-F10 HSD16M64F8V-F12 HSD16M64F8V-F13 HS |
Synchronous DRAM Module, 128Mbyte ( 16M x 64-Bit ) SMM based on 16Mx8 4Banks, 4K Ref., 3.3V Synchronous DRAM Module 128Mbyte (16Mx64bit), SMM ,16Mx8, 4Banks, 4K Ref. 3.3V
|
Hanbit Electronics Co.,Ltd
|
KM416C1004CJ-5 KM416C1004CJ-6 KM416C1004CJL-6 KM41 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh
|
Samsung Electronic
|
W9864G6IH |
1M X 4BANKS X 16BITS SDRAM
|
Winbond
|
HY5Y2B6DLF-HE HY5Y2B6DLFP-HE |
4Banks x 2M x 16bits Synchronous DRAM
|
Hynix Semiconductor
|
HY5S2B6DLF-BE HY5S2B6DLF-SE HY5S2B6DLFP-SE HY5S2B6 |
4Banks x 2M x 16bits Synchronous DRAM
|
Hynix Semiconductor http://
|
HY57V643220DT-6 HY57V643220DLTP-45 HY57V643220DLTP |
4Banks x 512K x 32bits Synchronous DRAM
|
HYNIX[Hynix Semiconductor]
|